Integrated circuit device, manufacturing method thereof, and display device
申请公布号:US2008042120(A1)
申请号:US20070802706
申请日期:2007.05.24
申请公布日期:2008.02.21
发明人:SHIBATA AKIHIDE;FUJII KATSUMASA;TAKAFUJI YUTAKA;IWATA HIROSHI
分类号:H01L29/06;B82B1/00;B82B3/00;B82Y10/00;B82Y30/00;B82Y40/00;G09F9/00;G09F9/30;H01L21/44;H01L21/8234;H01L21/8238;H01L27/06;H01L27/092;H01L29/786;H01L29/861;H01L29/868
主分类号:H01L29/06
摘要:An integrated circuit device of the present invention includes a substrate on which at least two types of nano wire element are provided. These nano wire elements have functions and materials different from each other. The nano wire elements are constituted by nano wires having sizes differing depending on types of nano wire element. With this, it is possible to dramatically improve a function of the integrated circuit device, as compared with an integrated circuit device including a substrate on which one type of nano wire element is provided.