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Semiconductor memory device realizing high-speed access

申请公布号:US2008043554(A1)

申请号:US20070703785

申请日期:2007.02.08

申请公布日期:2008.02.21

申请人:
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人:KURUMADA MAREFUSA;SATOMI KATSUJI

分类号:G11C7/12;G06F12/00

主分类号:G11C7/12

摘要:In data read, a single read global bit line is shared with a plurality of local bit lines.

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