METHOD OF WAFER PLATING
申请公布号:KR20070119502(A)
申请号:KR20070055348
申请日期:2007.06.07
申请公布日期:2007.12.20
发明人:UCHIUMI YUJI
分类号:C25D7/12
主分类号:C25D7/12
摘要:A method of wafer plating is provided to make it possible to carry out plating with a uniform film thickness on the entire area of a plated surface even for a wafer with a large diameter by improving conventional wafer plating treatment techniques. In a method of wafer plating comprising disposing a wafer on an opening of a plating vessel, contacting an outer peripheral side of the wafer with a cathode electrode, supplying a plating solution, thereby causing the plating solution that has reached the wafer to flow in the outer peripheral direction of a wafer surface to be plated, and supplying a plating current by an anode electrode(A) disposed within the plating vessel oppositely to the wafer and the cathode electrode, thereby subjecting the wafer to a plating treatment, the method is characterized in that the anode electrode has a shape that is almost the same shape as the wafer surface to be plated, a plurality of peripheral edge current supplying parts(ar1-ar4) are installed on a peripheral edge of the anode electrode, and a central current supplying part(ac) is installed in the center of the anode electrode at the same time so as to adjust a peripheral edge plating current supplied from the peripheral edge current supplying parts and a central plating current supplied from the central current supplying part.
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