Bolometric Infrared Sensor Having Two-Layer Structure and Method for Manufacturing the Same,申请号US20040574935-传众专利搜索

Bolometric Infrared Sensor Having Two-Layer Structure and Method for Manufacturing the Same

申请公布号：US2007262256(A1)

申请号：US20040574935

申请日期：2004.09.09

申请公布日期：2007.11.15

申请人：

OCAS CORP.

发明人：LEE HONG-KI

分类号：G01J5/00;G01J5/20

主分类号：G01J5/00

摘要：The present disclosure is related to bolometric infrared sensors having a two-layer structure and methods for manufacturing the same for improving an absorption rate by a spectroscopic design for resonantly absorbing infrared, and preventing the deformation of a sensor caused by stresses due to heat. The infrared sensor including an ROIC substrate and several pixels, comprises: a bottom layer including a reflective metal layer on the ROIC substrate; a cavity for resonantly absorbing infrared ray over the bottom layer; an upper layer of a sandwich shape including an absorption-transmission layer having a cutting area in the middle thereof and a bolometer layer placed both on and under the absorption-transmission layer; and anchors positioned at the edges of the pixel for supporting the upper layer and functioning as electrodes.