METHOD FOR PRODUCING HIGH PURITY POLYCRYSTALLINE SILICON,申请号JP20050344004-传众专利搜索

METHOD FOR PRODUCING HIGH PURITY POLYCRYSTALLINE SILICON

申请公布号：JP2007145663(A)

申请号：JP20050344004

申请日期：2005.11.29

申请公布日期：2007.06.14

申请人：

CHISSO CORP

发明人：HONDA SHIYUUICHI;YASUEDA MINORU;HAYASHIDA SATOSHI;YAMAGUCHI MASATSUGU

分类号：C01B33/033

主分类号：C01B33/033

摘要：PROBLEM TO BE SOLVED: To provide a method for relatively inexpensively and continuously mass-producing high purity polycrystalline silicon by conquering the technical problems in the conventional methods for producing high purity polycrystalline silicon such as a Siemens method. SOLUTION: The method for producing high purity polycrystalline silicon is characterized in that, using a vertical reactor having a silicon chloride gas feed nozzle installed in the upper part, a reducing agent gas feed nozzle and an exhaust gas release pipe, silicon chloride gas and reducing agent gas are fed into the reactor, the silicon chloride gas and the reducing agent gas are reacted, so as to produce polycrystalline silicon at the tip part of the silicon chloride gas feed nozzle, and further, the polycrystalline silicon is grown from the tip part of the silicon chloride gas feed nozzle toward the lower part thereof. COPYRIGHT: (C)2007,JPO&INPIT