TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME,申请号KR20050134179-传众专利搜索

TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

申请公布号：KR100729122(B1)

申请号：KR20050134179

申请日期：2005.12.29

申请公布日期：2007.06.08

申请人：

DONGBU ELECTRONICS CO., LTD.

发明人：PARK, JEONG HO

分类号：H01L29/78;H01L21/336

主分类号：H01L29/78

摘要：<p>A transistor of a semiconductor device and its manufacturing method are provided to control effectively short channel effect, to prevent the degradation of transistor performance due to a hot carrier phenomenon and to improve the degree of integration by increasing the length of an effective channel using a vertical transistor. First source/drain regions(30) are formed on a semiconductor substrate(10) by using a first ion implantation. A first sacrificial layer with a hole for exposing the first source/drain regions to the outside is formed thereon. A channel forming region(90) is formed in the hole by depositing a first conductor layer on the first sacrificial layer and planarizing the first conductor layer. The first sacrificial layer is removed by using a wet etching process. A second sacrificial layer is formed on the resultant structure. A second ion implantation is performed on the resultant structure and the second sacrificial layer is removed therefrom. A gate insulating layer(130) and a gate conductor(170) are formed on the channel forming region. Second source/drain regions(210) are formed on the channel forming region by performing a third ion implantation. An interlayer dielectric(230) with a contact hole for exposing the first and second source/drain regions and the gate conductor is formed thereon.</p>