METHOD OF PRODUCING DIAMOND FILM FOR LITHOGRAPHY,申请号KR20000066061-传众专利搜索

METHOD OF PRODUCING DIAMOND FILM FOR LITHOGRAPHY

申请公布号：KR100725670(B1)

申请号：KR20000066061

申请日期：2000.11.08

申请公布日期：2007.06.08

分类号：H01L21/20;C23C16/01;C23C16/02;C23C16/27;G03F1/20

主分类号：H01L21/20

摘要：<p>There is disclosed a method for producing a diamond film for lithography wherein a diamond film is formed on a silicon substrate on which an insulating film is formed or on an insulating substrate using a mixed gas of methane gas, hydrogen gas and oxygen gas as a raw material gas, and then the substrate is removed by etching treatment, and a method of producing a mask membrane for lithography wherein diamond particles fluidized with gas are brought into contact with a surface of a silicon substrate on which an insulating film is formed or an insulating substrate, a diamond film is grown on the substrate, and then the substrate is removed by etching treatment. There can be provided a method of producing a diamond film for lithography wherein a diamond film having high crystallinity and desired membrane stress can be formed on a substrate, and the film can be easily produced without degrading smoothness, membrane stress or the like after film formation.</p>