METHOD AND APPARATUS FOR CRYSTALLIZING SEMICONDUCTOR WITH LASER BEAMS,申请号KR20070050604-传众专利搜索

METHOD AND APPARATUS FOR CRYSTALLIZING SEMICONDUCTOR WITH LASER BEAMS

申请公布号：KR20070058424(A)

申请号：KR20070050604

申请日期：2007.05.25

申请公布日期：2007.06.08

申请人：

SHARP KABUSHIKI KAISHA;JAPAN LASER CORPORATION

发明人：SASAKI NOBUO;UZUKA TATSUYA;OKI KOICHI

分类号：H01L21/324;B23K26/067;C30B1/00;C30B13/24;C30B35/00;G01B11/02;H01L21/20;H01L21/26;H01L21/268;H01L21/336;H01L21/477;H01L29/786

主分类号：H01L21/324

摘要：A semiconductor crystallizing method using a laser beam is provided to increase throughput even when CW(continuous wave) solid laser is used, by simultaneously irradiating the laser beams to a semiconductor layer such that the laser beams are emitted from a plurality of laser sources. The laser beam that is emitted by a plurality of laser beams to melt and crystallize a semiconductor layer is irradiated to the surface of a semiconductor layer on a substrate(12) by using a focus adjusting optical system. The plurality of laser beams that don't overlap each other are irradiated to the substrate so as to be injected to the semiconductor layer, so that the melted traces of the semiconductor layer are positioned to overlap each other.