SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF,申请号JP20070043571-传众专利搜索

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

申请公布号：JP2007134747(A)

申请号：JP20070043571

申请日期：2007.02.23

申请公布日期：2007.05.31

申请人：

MATSUSHITA ELECTRIC IND CO LTD

发明人：TSUTSUE MAKOTO;UCHIUMI KATSUKI

分类号：H01L21/3205;H01L21/768;H01L21/822;H01L23/52;H01L27/04

主分类号：H01L21/3205

摘要：PROBLEM TO BE SOLVED: To reduce possibility in which the damage during dicing reaches to a chip region, and to prevent the reliability of a semiconductor device from degrading. SOLUTION: A stacked structure of interlayer insulating films 105 to 109 are formed on a substrate 101. A seal ring 104 is formed in the stacked structure of the interlayer insulating films 105 to 109 at the periphery of a chip region 102, which penetrates through the stacked structure and surrounds the chip region 102 successively. A passivation film 109 on the stacked structure of the interlayer insulating films 105 to 109 has an opening on the seal ring 104, while a cap layer 125 connecting to the seal ring 104 is formed in the opening. The seal ring 104 includes seal vias 123a and 123b neighboring each other, for example, in the interlayer insulating film 107, and having a line shaped structure, and the both seal vias 123a and 123b are connected to a same seal wiring 122 constituting the seal ring 104. COPYRIGHT: (C)2007,JPO&INPIT