可程式化非挥发性记忆体及其形成方法
申请公布号:CN1933162A
申请号:CN200610103929.2
申请日期:2006.07.28
申请公布日期:2007.03.21
发明人:宋弘政;徐德训;王士玮
分类号:H01L27/115(2006.01);H01L29/788(2006.01);H01L21/8247(2006.01);H01L21/336(2006.01)
主分类号:H01L27/115(2006.01)
代理人:寿宁;张华辉
地址:台湾省新竹市新竹科学工业园区力行六路8号
摘要:本发明是有关于一种可程式化非挥发性记忆体装置及其形成方法,该方法与互补式金氧半导体(CMOS)逻辑装置制程相容,用以改善制程流程,该可程式化非挥发性记忆体装置包括一半导体基底主动区;一闸极介电层在该半导体基底主动区上;一浮接闸极电极在该闸极介电层上;一闸极间介电层在该浮接闸极电极上方;一控制闸极镶嵌电极延伸穿过一绝缘介电层且与闸极间介电层有电性沟通,该控制闸极镶嵌电极位于浮接闸极电极之上。
主权项:1、一种可程式化非挥发性记忆体,其特征在于包括:一半导体基底主动区;一闸极介电层,位于该半导体基底主动区上;一浮接闸极电极,位于该闸极介电层上;一闸极间介电层,位于该浮接闸极电极的上方;以及一控制闸极镶嵌电极,延伸穿过一绝缘介电层与该闸极间介电层有电性沟通,该控制闸极镶嵌电极位于该浮接闸极电极上部之上。
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