Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements,申请号US20050185507-传众专利搜索

Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements

申请公布号：US2007019337(A1)

申请号：US20050185507

申请日期：2005.07.19

申请公布日期：2007.01.25

申请人：

APALKOV DMYTRO;HUAI YIMING

发明人：APALKOV DMYTRO;HUAI YIMING

分类号：G11B5/127;G11B5/33;G11C11/00;G11C11/15;H01L21/00

主分类号：G11B5/127

摘要：A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.