TEST PATTERN FOR MEASURING THE CONTACT RESISTANCE OF METAL INTERCONNECTION,申请号KR20050060597-传众专利搜索

TEST PATTERN FOR MEASURING THE CONTACT RESISTANCE OF METAL INTERCONNECTION

申请公布号：KR20070005321(A)

申请号：KR20050060597

申请日期：2005.07.06

申请公布日期：2007.01.10

申请人：

HYNIX SEMICONDUCTOR INC.

发明人：RHO, IL CHEOL;KIM, CHOON HWAN

分类号：H01L21/66

主分类号：H01L21/66

摘要：A test pattern for measuring contact resistance of a metal line is provided to acquire exact contact resistance by forming a line pitch of a test metal line layer same as that of a real metal line layer. A test pattern is used for measuring a contact resistance of a metal line structure, wherein the metal line structure is composed of a first metal line layer of a first level, a second metal line layer of a second level, and a via contact for connecting the first and second metal line layers with each other. The test pattern is composed of a first test metal line layer(310) corresponding to the first metal line layer and a second test metal line layer(320) corresponding to the second metal line layer, The first and second test metal line layers have the same line pitches as those of the first and second metal line layers.