Selective nitridation of gate oxides,申请号US20040707897-传众专利搜索

Selective nitridation of gate oxides

申请公布号：US7138691(B2)

申请号：US20040707897

申请日期：2004.01.22

申请公布日期：2006.11.21

申请人：

INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人：BURNHAM JAY S.;ELLIS-MONAGHAN JOHN J.;NAKOS JAMES S.;QUINLIVAN JAMES J.

分类号：H01L27/092;H01L29/76;H01L21/318;H01L21/8238;H01L29/78

主分类号：H01L27/092

摘要：A semiconductor structure includes thin gate dielectrics that have been selectively nitrogen enriched. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, without appreciably degrading device performance. A lower concentration of nitrogen is introduced into pFET gate dielectrics than into nFET gate dielectrics. Nitridation may be accomplished selectively by various techniques, including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation and/or polysilicon implantation.