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ORGANIC THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

申请公布号:JP2006303507(A)

申请号:JP20060116920

申请日期:2006.04.20

申请公布日期:2006.11.02

申请人:
SAMSUNG SDI CO LTD

发明人:MOON HEE-SUNG;KIM JAE MYUNG

分类号:H01L29/786;H01L51/05;H01L51/30

主分类号:H01L29/786

摘要:<p><P>PROBLEM TO BE SOLVED: To provide an organic TFT having an organic semiconductor layer formed by mixing a CNT which has a low work function and exhibits a high field-emission effect, a high electric charge mobility and a high electrical conductivity with an organic semiconductor material, or by coating the organic semiconductor material on the CNT, thereby attaining a high electrical conductivity and electrical charge mobility and a high switching speed, and also to provide a method of fabricating the above organic TFT. <P>SOLUTION: In an organic TFT and a method of fabricating the organic TFT, the organic TFT has an organic semiconductor layer formed by mixing a CNT with an organic semiconductor material, or by coating an organic semiconductor material on a CNT. The properties of the CNT exhibiting a high electrical conductivity and a high electrical charge mobility cause improving the properties of an organic semiconductor layer exhibiting an existing low electrical conductivity and switching characteristic. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>

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