HEAT TREATMENT APPARATUS
申请公布号:JP2006278806(A)
申请号:JP20050096799
申请日期:2005.03.30
申请公布日期:2006.10.12
发明人:KUSUDA TATSUFUMI
分类号:H01L21/26;H01L21/265;H01L21/31
主分类号:H01L21/26
摘要:PROBLEM TO BE SOLVED: To provide a heat treatment apparatus capable of preventing the crack of a substrate even when flash irradiation is performed with big energy. SOLUTION: At the time of irradiation with flash light from a flash lamp, a semiconductor wafer W to be a processing object is held in a horizontal posture only by a susceptor 721. The diameter of the susceptor 721 is smaller than the diameter of the mounted semiconductor wafer W. Thus, the end edge of the semiconductor wafer W is released to a free space, and even when the semiconductor wafer W is largely curved into a convex shape by the irradiation with the flash light of strong energy, there is no risk that the end edge is brought into contact with other members. As a result, even when the semiconductor wafer W is largely warped into the convex shape at the time of flash heating, stress generated inside the entire semiconductor wafer W by the curving is reduced and wafer cracks are prevented. COPYRIGHT: (C)2007,JPO&INPIT
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