POLISHING SYSTEM WITH STOPPING COMPOUND AND METHOD OF ITS USE,申请号JP20060104616-传众专利搜索

POLISHING SYSTEM WITH STOPPING COMPOUND AND METHOD OF ITS USE

申请公布号：JP2006245598(A)

申请号：JP20060104616

申请日期：2006.04.05

申请公布日期：2006.09.14

申请人：

CABOT MICROELECTRONICS CORP

发明人：WANG SHUMIN;KAUFMAN VLASTA BRUSIC;GRUMBINE STEVEN K;CHERIAN ISAAC K

分类号：B24B37/00;H01L21/304;B24B57/02;B24D11/00;C09G1/02;C09K3/14

主分类号：B24B37/00

摘要：PROBLEM TO BE SOLVED: To provide a composition for polishing a substrate that includes a first metal layer and a second layer, in which the flattening effect, uniformity and removal speed of the first metal layer are maximized, and the flattening of the second layer is minimized. SOLUTION: The invention provides the composition for polishing one or more layers of a multi-layer substrate that includes the first metal layer and the second layer, to be used with (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer: the second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and (v) a polishing pad and/or an abrasive. COPYRIGHT: (C)2006,JPO&NCIPI