Charge pump circuit and power supply circuit,申请号US20060396625-传众专利搜索

Charge pump circuit and power supply circuit

申请公布号：US2006176718(A1)

申请号：US20060396625

申请日期：2006.04.04

申请公布日期：2006.08.10

发明人：ITOH KOHZOH

分类号：H02M3/18;H02M7/19

主分类号：H02M3/18

摘要：A charge pump circuit is provided for generating a voltage (1+1/n) times as high as a supply voltage. The charge pump circuit eliminates the need for diodes for preventing a current from flowing back from a high potential side of capacitors to prevent a reduction in the voltage due to a forward voltage, and reduces a reactive current and latch-up when the charge pump circuit is integrated into a single IC chip. The charge pump circuit includes a fourth switching element having a substrate gate connected to a drain for preventing a current from flowing back to an input terminal from a high potential side of fly back capacitors connected in series, and a second switching element having a substrate gate connected to a drain for preventing a current from flowing back from a high potential side of a catch-up capacitor to the fly back capacitors connected in series.