Method for fabricating a buried bit line for a semiconductor memory,申请号US20030623843-传众专利搜索

Method for fabricating a buried bit line for a semiconductor memory

申请公布号：US7074678(B2)

申请号：US20030623843

申请日期：2003.07.21

申请公布日期：2006.07.11

申请人：

INFINEON TECHNOLOGIES AG

发明人：POLEI VERONIKA;ROEHRICH MAYK;GRATZ ACHIM

分类号：H01L21/336;H01L21/225;H01L21/74

主分类号：H01L21/336

摘要：In a method for fabricating a buried bit line for a semiconductor memory, the buried bit line is produced as a diffusion region using a dopant source including polysilicon that has previously been applied above the region intended for the buried bit line. This keeps the extent of diffusion within limits and means that the doped polysilicon is particularly suitable for the formation of the insulating oxide region above the buried bit line, due to the rapid oxidation.