Sealed nitride layer for integrated circuits,申请号US20010033156-传众专利搜索

Sealed nitride layer for integrated circuits

申请公布号：US7071111(B2)

申请号：US20010033156

申请日期：2001.10.25

申请公布日期：2006.07.04

申请人：

INTERSIL AMERICAS INC.

发明人：BEASOM JAMES D.

分类号：H01L21/311;H01L21/318;H01L21/768;H01L23/58

主分类号：H01L21/311

摘要：The present invention relates to an integrated circuit having a sealed nitride layer. In one embodiment, a method of forming a sealing nitride layer overlaying a silicon oxide layer in a contact opening of an integrated circuit is disclosed. The method comprises, forming a second layer of nitride overlaying a first layer of nitride to form the sealing nitride layer. The second layer of nitride further overlays an exposed portion of a surface of a substrate in the contact opening and sidewalls of the contact opening. Using reactive ion etching (RIE etch) without a mask to remove a portion of the second nitride layer adjacent the surface of the substrate in the contact opening to expose a portion of the surface of the substrate in the contact opening without removing portions of the second nitride layer covering the sidewalls of the contact opening.