SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE,申请号JP20050278832-传众专利搜索

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE

申请公布号：JP2006128651(A)

申请号：JP20050278832

申请日期：2005.09.26

申请公布日期：2006.05.18

申请人：

DOWA MINING CO LTD

发明人：SAKAMOTO RYO;TOBA RYUICHI;IKEDA HIROYUKI

分类号：H01L21/205;H01L21/20;H01L21/304

主分类号：H01L21/205

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor substrate without any property degradation by a carrier storage caused by the fact that Si acts as a donor and an aggravation of a front surface mofology. SOLUTION: The semiconductor device has one or more compound single crystal films 7 formed on a compound semiconductor layer substrate 1. An Si oxide film is provided on any of the front surface of the compound semiconductor layer substrate 1, an interface between this substrate 1 front surface and the compound single crystal film 7 or a front surface of the compound single crystal film 7, and the haze of the front surface or the interface on which the Si oxide film is formed is 10 ppm or less. The Si oxide film can be formed by growing a second or further a large number of GaAs epitaxial layers 3 and 4 after carrying out a surface treatment on Si or Si compound 5 existing on the surface of the substrate 1 or the base film 7 with ozone water. COPYRIGHT: (C)2006,JPO&NCIPI