Memory structure and manufacturing as well as programming method thereof,申请号US20040944903-传众专利搜索

Memory structure and manufacturing as well as programming method thereof

申请公布号：US2006073702(A1)

申请号：US20040944903

申请日期：2004.09.21

申请公布日期：2006.04.06

申请人：

SKYMEDI CORPORATION

发明人：SHONE FUJA

分类号：H01L21/44

主分类号：H01L21/44

摘要：A memory structure includes a floating gate and a nitride gate dielectric on a semiconductor substrate, wherein the floating gate and nitride gate dielectric function as two memory cells. In addition to the floating gate and nitride gate dielectric, the memory structure further comprises two bitlines and a select gate. The two bitlines are formed in the semiconductor substrate, the floating gate and the select gate are formed above the semiconductor substrate and transversely disposed between the two bitlines, and the nitride gate dielectric is formed between the select gate and the semiconductor substrate.