LAMINATION STRUCTURE OF SEMICONDUCTOR DEVICE
申请公布号:JP2006080149(A)
申请号:JP20040259875
申请日期:2004.09.07
申请公布日期:2006.03.23
发明人:OKANO TETSUYUKI;KITAOKA KOKI
分类号:H01L25/18;H01L25/065;H01L25/07
主分类号:H01L25/18
摘要:PROBLEM TO BE SOLVED: To provide the lamination structure of a semiconductor device capable of cutback of the number of manufacturing processes, reduction of a manufacturing cost, and also improvement in reliability. SOLUTION: The lamination structure of a semiconductor device is constituted such that: two or more semiconductor devices having a semiconductor substrate wherein a circuit is formed on the surface of one side of thickness direction are laminated and connected electrically; an electrode pad connected electrically to the circuit is formed on the surface of the semiconductor substrate in the semiconductor device; a penetration hole is formed so as to penetrate the semiconductor substrate to the electrode pad along the thickness direction from the surface of the other side of the thickness direction of the semiconductor substrate; at least one projection electrode is formed, connected electrically to the electrode pad, and projected from the electrode pad to the one side of the thickness direction from the other side of the thickness direction of the semiconductor substrate; and, when a semiconductor device is laminated, the projection electrode of one semiconductor device of the two adjoining semiconductor devices is inserted into the penetration hole of the other semiconductor device and connected to the electrode pad of the semiconductor device electrically. COPYRIGHT: (C)2006,JPO&NCIPI
Federgelenkanordnung für Stromabnehmer
Verfahren zur Herstellung von Sulfonsäureamidgruppen enthaltenden Acrylnitrilmischpolymeren
Verfahren zur Verstärkung von Latices aus organischen Polymeren
Schmiermittelgemische auf Organopolysiloxangrundlage
Verfahren zur Herstellung von neuen Benzolsulfonylharnstoffen und deren Salzen
Verfahren zur Herstellung vonα-6-Desoxy-5-oxytetracyclin undα-6-Desoxytetracyclin
Lumineszenzdiode mit einem A<III>B<V>-Halbleiter-Einkristall
Vorrichtung zur Befestigung der Anschlußlamellen und der Kontaktlamellen auf einem starren Träger
Schalteinrichtung für Magnettongeräte
Verfahren zur Herstellung von insbesondere lagerstabilen Bleiteilchen
Verfahren zur Herstellung von neuer Addukte aus Polyepoxyden und Polyaminen