Silicon on insulator substrate having improved thermal conductivity and method of its formation

申请公布号：US7015078(B1)

申请号：US20030658668

申请日期：2003.09.09

申请公布日期：2006.03.21

申请人：

ADVANCED MICRO DEVICES, INC.

发明人：XIANG QI;GOO JUNG-SUK;PAN JAMES

分类号：H01L21/00

主分类号：H01L21/00

摘要：A silicon on insulator (SOI) substrate includes a layer of silicon carbide beneath an insulating layer on which semiconductor devices are formed. The silicon carbide layer has a high thermal conductivity and provides beneficial dissipation of thermal energy generated by the devices. The SOI substrate may be formed by a bonding method. SOI MOSFET devices using the SOI substrate are also disclosed.

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