存储器中延伸式电容制法及装置
申请公布号:CN1245748C
申请号:CN02152634.6
申请日期:2002.11.28
申请公布日期:2006.03.15
发明人:王重博;夏启明
分类号:H01L21/70(2006.01);H01L21/8239(2006.01)
主分类号:H01L21/70(2006.01)
代理人:任永武
地址:台湾省新竹市新竹科学工业园区研新三路4号
摘要:本发明有关一种存储器中延伸式电容的制法及装置,主要于存储器的基板上先形成有相互错开的接触区(Contact node),再于各接触区上方沉积形成有一电镀基材,于此电镀基材的两侧面则是电镀有导电材质以构成电容极板,之后再将该电镀基材蚀刻去除仅保留电容极板,即完成电容的形成步骤,以上述步骤所得的电容具有较用技术更大的有效极板面积,故于高密度的存储器制程中可有效提升容值。
主权项:1.一种存储器中延伸式电容制法,其特征在于,包括:形成多个接触区,是于一存储器基板上先形成有多个安排呈错开形式的接触区;沉积电镀基材,是于各错开的接触区上方沉积电镀基材,且电镀基材仅覆盖于接触区的一部分;沉积及蚀刻氧化层,于前述形成有电镀基材的存储器基板上先全面性沉积有一氧化层,再以光罩蚀刻技术将部分氧化层去除,而仅保留覆盖于电镀基材顶面的氧化层;沉积隔离层,于前述电镀基材上形成有多道隔离层,将各电镀基材分隔为多段;电镀电容极板层,于各电镀基材的两侧面上且未覆盖有隔离层的区域电镀有导电材质以构成电容极板层;去除隔离层及电镀基材,于形成电容极板层之后,将前述各隔离层及电镀基材蚀刻去除,以于各接触区上形成有大面积的片状电容极板。
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