CHARGE-TRAPPING MEMORY ARRAYS RESISTANT TO DAMAGE FROM CONTACT HOLE FORMATION

申请公布号：KR20060009819(A)

申请号：KR20057016555

申请日期：2004.01.08

申请公布日期：2006.02.01

申请人：

SPANSION LLC

发明人：KAMAL TAZRIEN;RAMSBEY MARK T.;SHIRAIWA HIDEHIKO;CHEUNG FRED TK

分类号：H01L27/115;H01L21/8246;H01L21/8247

主分类号：H01L27/115

摘要：<p>The present invention relates to a memory array (100) comprising a substrate (222) and a plurality of bitlines (224) having contacts (240) and a plurality of wordlines (201, 202) intersecting the bitlines (224). A protective spacer (234) is used to separate the bitline contacts (240) from the wordlines (201) adjacent to the bitline contacts (240) to prevent damage caused during the formation of the bitline contacts (240). The present invention also relates to a method of forming the memory array.</p>

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