GROUP III-V NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE, ITS PRODUCING METHOD, AND GROUP III-V NITRIDE SEMICONDUCTOR,申请号JP20040174615-传众专利搜索

GROUP III-V NITRIDE SEMICONDUCTOR SELF-STANDING SUBSTRATE, ITS PRODUCING METHOD, AND GROUP III-V NITRIDE SEMICONDUCTOR

申请公布号：JP2005350315(A)

申请号：JP20040174615

申请日期：2004.06.11

申请公布日期：2005.12.22

申请人：

HITACHI CABLE LTD

发明人：SHIBATA MASATOMO

分类号：C30B29/38;C30B25/18;C30B29/40;C30B29/60;H01L21/00;H01L21/20;H01L29/04;H01L29/20;H01L29/24;(IPC1-7):C30B29/38

主分类号：C30B29/38

摘要：PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor self-standing substrate suitable for epitaxially growing a group III-V nitride semiconductor, in consideration of the presence of dispersion in off angle within the substrate surface at the time of the production of the nitride semiconductor substrate. SOLUTION: In a GaN self-standing substrate 11, the crystal orientation vertical to the substrate surface is set to be inclined by 0.09°or more from the C-axis direction, and at the same time, the dispersion in the inclination within the substrate surface is suppressed to be within±1°. COPYRIGHT: (C)2006,JPO&NCIPI