碳奈米构造体之制法

申请公布号：TW200540111

申请号：TW094112182

申请日期：2005.04.18

申请公布日期：2005.12.16

申请人：

住友电气工业股份有限公司

发明人：日方威

分类号：C01B31/02;C23C16/26;C23C16/52

主分类号：C01B31/02

代理人：何金涂;何秋远

地址：日本

摘要：本发明提供一种碳奈米构造体的制造方法，其能以高纯度且安定地制造更均一形状的碳奈米构造体。本发明关于一种从含触媒材料(12)的触媒基材(14)之结晶生长面(17)藉由气相生长以生成碳结晶之碳奈米构造体(18)的制造方法，特别地为使含原料气体的2种以上之气体同时接触该触媒基材(14)，以制造碳奈米构造体之方法。该2种以上的气体较佳系由1种以上的原料气体及1种以上的载体气体所构成，较佳为使载体气体接触结晶生长面(17)，以及使原料气体接触该载体气体所接触的结晶生长面(17)以外的区域内之至少一部分。原料气体较佳为含有离子，特佳为含有碳离子。

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