Dual work function semiconductor structure with borderless contact and method of fabricating the same,申请号US20050098103-传众专利搜索

Dual work function semiconductor structure with borderless contact and method of fabricating the same

申请公布号：US2005199966(A1)

申请号：US20050098103

申请日期：2005.04.04

申请公布日期：2005.09.15

申请人：

INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人：YE QIUYI;TONTI WILLIAM R.;LI YUJUN

分类号：H01L21/28;H01L21/60;H01L21/768;H01L21/8234;H01L21/8238;H01L21/8242;H01L23/522;H01L27/088;H01L27/092;H01L27/108;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):H01L21/824;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119

主分类号：H01L21/28

摘要：A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to the gate. Because the structure is a dual work function structure, the conductive contact is allowed to extend over the cap-free gate without being electrically connected thereto.