SELF ALIGNED DAMASCENE GATE,申请号WO2004US33251-传众专利搜索

SELF ALIGNED DAMASCENE GATE

申请公布号：WO2005048339(A1)

申请号：WO2004US33251

申请日期：2004.10.08

申请公布日期：2005.05.26

申请人：

ADVANCED MICRO DEVICES, INC.;TABERY, CYRUS, E.;AHMED, SHIBLY, S.;BUYNOSKI, MATTHEW, S.;DAKSHINA-MURPHY, SRIKANTESWARA;KRIVOKAPIC, ZORAN;WANG, HAIHONG;YANG, CHIH-YUH;YU, BIN

发明人：TABERY, CYRUS, E.;AHMED, SHIBLY, S.;BUYNOSKI, MATTHEW, S.;DAKSHINA-MURPHY, SRIKANTESWARA;KRIVOKAPIC, ZORAN;WANG, HAIHONG;YANG, CHIH-YUH;YU, BIN

分类号：H01L21/336;H01L29/786;(IPC1-7):H01L21/336

主分类号：H01L21/336

摘要：<p>A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) (200) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin (310) in the fin area, and forming a mask (320) in the fin area. The method further includes etching the mask (320) to expose a channel area (330) of the MOSFET (200), etching the fin (310) to thin a width of the fin (310) in the channel area (330), forming a gate over the fin (310), and forming contacts to the gate, the source region, and the drain region.</p>