Synthetic antiferromagnetic structure for magnetoelectronic devices,申请号US20020322979-传众专利搜索

Synthetic antiferromagnetic structure for magnetoelectronic devices

申请公布号：US6898112(B2)

申请号：US20020322979

申请日期：2002.12.18

申请公布日期：2005.05.24

申请人：

FREESCALE SEMICONDUCTOR, INC.

发明人：JANESKY JASON ALLEN;ENGEL BRADLEY N.;RIZZO NICHOLAS D.;SLAUGHTER JON M.

分类号：G01R33/09;G11C11/16;H01F10/32;H01F41/30;(IPC1-7):G11C11/00

主分类号：G01R33/09

摘要：A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.