Process for making angled features for nanolithography and nanoimprinting,申请号US20030668148-传众专利搜索

Process for making angled features for nanolithography and nanoimprinting

申请公布号：US6897158(B2)

申请号：US20030668148

申请日期：2003.09.22

申请公布日期：2005.05.24

申请人：

HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

发明人：SHARMA MANISH

分类号：G02F1/1337;H01L21/302;(IPC1-7):H10L21/461

主分类号：G02F1/1337

摘要：This invention provides a directional ion etching process for making nano-scaled angled features such as may be used, for example, in liquid crystal displays and or nanoimprinting templates. In a particular embodiment a semiconductor wafer substrate is prepared with at least one layer of material. A photoresist is applied, masked, exposed and developed. Anisotropic ion etching at a high angle relative to the wafer is performed to remove portions of the non protected material layer. The remaining photoresist caps shadow at least a portion of the material layer, and as the ion etching is performed at an angle, the protected portions of the material layer also appear at an angle.