Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector,申请号EP20020023242-传众专利搜索

Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector

申请公布号：EP1328049(A3)

申请号：EP20020023242

申请日期：2002.10.16

申请公布日期：2005.04.27

申请人：

AGILENT TECHNOLOGIES, INC.

发明人：TY TAN, MICHAEL, RENNE;LIN, CHAO, KUN;CORZINE, SCOTT, W.;ZHU, JINTIAN;LEARY, MICHAEL, H.

分类号：H01S5/183

主分类号：H01S5/183

摘要：A vertical-cavity surface-emitting laser (200) incorporating a supported air gap distributed Bragg reflector (204) is disclosed. The supported air gap DBR (204) includes a regrowth layer (272) of material that provides mechanical support for the original material layers (214). The supported air gap DBR (204) is fabricated by first growing alternating pairs of a first material (214) and a sacrificial material (216) over a suitable substrate (202). The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material (243). The dielectric material (243) is then selectively removed exposing regions of the first material (214) and sacrificial material (216) where selective regrowth of additional material (272) is desired. The selective regrowth of the additional material (272) provides mechanical support for the semiconductor material (214) that remains after a selective etch removal of the sacrificial material (216). <IMAGE>