Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film,申请号US20020224930-传众专利搜索

Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film

申请公布号：US6872649(B2)

申请号：US20020224930

申请日期：2002.08.20

申请公布日期：2005.03.29

申请人：

SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人：NAKAMURA TAKAO;MATSUBARA HIDEKI

分类号：H01L33/42;(IPC1-7):H01L21/44

主分类号：H01L33/42

摘要：A light emitting-layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation. Particularly, the method involves placing a substrate in a vacuum chamber, placing a target of the film material in the chamber, introducing oxygen into the chamber, laser-irradiating the target to emit atoms or molecular ions by ablation, and then depositing and oxidizing the atoms or ions to grow the transparent conductor film.