HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE,申请号AU20030266410-传众专利搜索

HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE

申请公布号：AU2003266410(A1)

申请号：AU20030266410

申请日期：2003.07.30

申请公布日期：2005.02.25

申请人：

INFINEON TECHNOLOGIES AG

发明人：CHAN LIM;KILHO LEE

分类号：H01L21/28;H01L29/51

主分类号：H01L21/28

摘要：A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.