Method for forming CVD film,申请号US20030692655-传众专利搜索

Method for forming CVD film

申请公布号：US2004228982(A1)

申请号：US20030692655

申请日期：2003.10.24

申请公布日期：2004.11.18

申请人：

KAWAURA HIROSHI

发明人：KAWAURA HIROSHI

分类号：H01L21/316;C23C16/44;C23C16/455;C23C16/515;H01L21/318;(IPC1-7):C23C16/00

主分类号：H01L21/316

摘要：The present invention provides a method for forming a uniform thickness vacuum CVD film on a surface of a substrate having a good step coverage and high quality. A process gas is supplied in a process chamber, which is closed by closing an exhaust port by closing a pressure control gate valve which is disposed between the process chamber and a vacuum pump. The process gas supply is stopped and a deposition on the substrate progresses for a certain period of time in the process chamber under pressure equilibrium closed condition. Thereafter or concurrently, in the same process chamber, an oxidizing gas or a nitrifying gas is supplied with plasma to oxidize or nitrify the formed film. By repetition of several cycles of these steps, a predetermined thickness film with high quality is obtained.