METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

申请公布号：WO2004097923(A1)

申请号：WO2003JP05506

申请日期：2003.04.30

申请公布日期：2004.11.11

申请人：

FUJITSU LIMITED;TAKIGAWA, YUKIO;SHIMIZU, NORIYOSHI;SUZUKI, TOSHIYA;KAWABE, HAJIME

发明人：TAKIGAWA, YUKIO;SHIMIZU, NORIYOSHI;SUZUKI, TOSHIYA;KAWABE, HAJIME

分类号：H01L21/314;H01L21/033;H01L21/311;H01L21/4763;H01L21/768;(IPC1-7):H01L21/320

主分类号：H01L21/314

摘要：<p>An SiC film (4), an SiO2 film (5) and a silicon nitride film (6) are formed sequentially on an organic low permittivity film (3) and then the surface of the silicon nitride film (6) is subjected to O2 plasma processing thus forming an oxide layer (7) on the surface of the silicon nitride film (6). Subsequently, a wiring trench pattern is formed on the silicon nitride film (6) and the oxide layer (7) thus forming a resin layer (10) having a pattern of via hole. Thereafter, the oxide layer (7) exposed from the resin layer (10) is removed along with unnecessary particles.</p>

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