Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof,申请号US20040774701-传众专利搜索

Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof

申请公布号：US2004195571(A1)

申请号：US20040774701

申请日期：2004.02.10

申请公布日期：2004.10.07

申请人：

LG.PHILIPS LCD CO., LTD.

发明人：AHN BYUNG CHUL;LIM BYOUNG HO;CHOI BYEONG DAE

分类号：H01L21/20;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/20;H01L21/00

主分类号：H01L21/20

摘要：A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.