Semiconductor-on-insulator body-source contact and method

申请公布号：US6790750(B1)

申请号：US20020163676

申请日期：2002.06.06

申请公布日期：2004.09.14

申请人：

ADVANCED MICRO DEVICES, INC.

发明人：LONG WEI;XIANG QI;LIU YOWJUANG W.

分类号：H01L21/336;H01L29/45;H01L29/786;(IPC1-7):H01L21/425;H01L27/01

主分类号：H01L21/336

摘要：A semiconductor device includes a wafer having a semiconductor layer with source, body and drain regions. A electrically-conducting region of the semiconductor region overlaps and electrically couples the source region and the body region. The electrical coupling of the source and body regions reduces floating body effects in the semiconductor device. A method of constructing the semiconductor device utilizes spacers, masking, and/or tilted implantation to form an source-body electrically-conducting region that overlaps the source and body regions of the semiconductor layer, and a drain electrically-conducting region that is within the drain region of the semiconductor layer.

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