SEMICONDUCTOR MEMORY,申请号JP20030018366-传众专利搜索

SEMICONDUCTOR MEMORY

申请公布号：JP2004234704(A)

申请号：JP20030018366

申请日期：2003.01.28

申请公布日期：2004.08.19

申请人：

RENESAS TECHNOLOGY CORP

发明人：KONO TAKASHI;HAMAMOTO TAKESHI

分类号：H01L21/8242;G11C11/409;G11C11/4091;G11C11/4097;H01L27/108

主分类号：H01L21/8242

摘要：<P>PROBLEM TO BE SOLVED: To attain the reduction of area as to a semiconductor memory, specifically for a DRAM (Dynamic Random Access Memory). <P>SOLUTION: By connecting a sense amplifier driving line S2N to a source of an N-channel MOS transistor 103, voltages Vgs between gates and sources of N-channel MOS transistors 101, 102 become 0 volt since the sense amplifier driving line S2N and a couple of LIO lines are both on the precharge potential VBL even though a control signal LAMPE temporarily becomes H level, then a sub-amplifier does not operate. Consequently, the addition of a circuit constitution for supplying a signal to convey the activation of a row block is not required, and the reduction of area for the semiconductor memory is attained. <P>COPYRIGHT: (C)2004,JPO&NCIPI