SAMPLE FOR MEASURING LIGHTLY DOPED SILICON RESISTANCE AND FABRICATING METHOD THEREOF

申请公布号：KR20040044725(A)

申请号：KR20020072875

申请日期：2002.11.21

申请公布日期：2004.05.31

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：HWANG, JANG WON;JUNG, U SEOK;PARK, TAE HYEONG

分类号：H01L21/66;(IPC1-7):H01L21/66

主分类号：H01L21/66

摘要：PURPOSE: A sample for measuring a lightly doped silicon resistance and a fabricating method thereof are provided to enhance an electric characteristic of a TFT having an LDD(Lightly Doped Drain) structure or an offset structure by measuring a lightly doped silicon thin film. CONSTITUTION: A sample for measuring a silicon resistance doped with low density of ions includes a base substrate, a silicon thin film, and a plurality of conductive resistance measurement pads. The silicon thin film is formed on the base substrate(100). The silicon thin film includes a lightly doped region(112) and a couple of heavily doped regions(113,115). The conductive resistance measurement pads(122,125) are formed on the heavily doped regions.

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