THIN FILM TRANSISTOR SUBSTRATE,申请号KR20020065493-传众专利搜索

THIN FILM TRANSISTOR SUBSTRATE

申请公布号：KR20040036824(A)

申请号：KR20020065493

申请日期：2002.10.25

申请公布日期：2004.05.03

申请人：

SAMSUNG ELECTRONICS CO., LTD.

发明人：KIM, GYEONG HYEON;LEE, GYE HEON;LEE, JEONG HO

分类号：G02F1/1343

主分类号：G02F1/1343

摘要：PURPOSE: A TFT substrate is provided to simultaneously form projections for determining orientation of a liquid crystal when forming data wires, in order to omit a process for forming the projections, thereby reducing entire processes as suppressing formation of textures. CONSTITUTION: A transparent insulating substrate(110) is comprised. Gate wires(121,123) are formed on the insulating substrate(110). A gate insulating layer(140) is formed on the gate wires(121,123). A semiconductor layers(150,151,154) are formed on the gate insulating layer(140), and dispose channels. Resistive contact layers(160,161,163,165) are disposed in the same plane patterns as the semiconductor layers(150,151,154) except predetermined regions of the semiconductor layers(150,151,154). Data wires are defined on the resistive contact layers(160,161,163,165). A protective layer(180) has a contact hole(181) that exposes predetermined regions of the data wires. Pixel electrodes(190a,190b,190c,191a,191b) are connected to the data wires, and include plural small portions. Projections(280a,280b,280c) are formed between the small portions.