SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD,申请号KR20030062948-传众专利搜索

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

申请公布号：KR20040024501(A)

申请号：KR20030062948

申请日期：2003.09.09

申请公布日期：2004.03.20

申请人：

KABUSHIKI KAISHA TOSHIBA

发明人：IZUHA MITSUAKI;IINUMA TOSHIHIKO;SUGURO KYOICHI

分类号：H01L21/335;H01L21/28;H01L21/336;H01L21/8234;H01L27/088;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/335

主分类号：H01L21/335

摘要：PURPOSE: To provide a semiconductor device which can suppress an increase in sheet resistance in a postheat process and increase a switching speed by reduction of the parasitic resistance of a transistor. CONSTITUTION: The semiconductor device is equipped with a MOSFET comprising a gate electrode 5 including a poly-Si1-xGex layer with a Ge/(Si+Ge) composition ratio (x) (0<x<0.2, preferably, 0.04<=x<=0.16 ), a 1st metal silicide film 10b which is formed of NiSi1-yGey on the gate electrode, and 2nd and 3rd metal silicide films 10a and 10b which are formed of NiSi on source/drain areas SO and DR respectively. The increase in sheet resistance in the postheat process is suppressed and the switching speed can be made fast by reduction of the parasitic resistance of the transistor.