FERROELECTRIC MEMORY, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF FERROELECTRIC MEMORY AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE,申请号JP20020236568-传众专利搜索

FERROELECTRIC MEMORY, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF FERROELECTRIC MEMORY AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

申请公布号：JP2004079711(A)

申请号：JP20020236568

申请日期：2002.08.14

申请公布日期：2004.03.11

申请人：

SEIKO EPSON CORP

发明人：SAWAZAKI TATSUO;NATORI EIJI;FURUBAYASHI TOMOKAZU;HAMADA YASUAKI

分类号：H01L21/268;H01L21/00;H01L21/26;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L27/105

主分类号：H01L21/268

摘要：PROBLEM TO BE SOLVED: To provide the manufacturing method of a ferroelectric memory which reduces a thermal load for restoring the characteristics of a ferroelectric capacitor, and to provide the manufacturing method of a semiconductor device and the ferroelectric memory as well as the semiconductor device employing the manufacturing methods. SOLUTION: The manufacturing method of the ferroelectric memory comprises the irradiation of pulse type laser beam 70 from the upper part of the ferroelectric capacitor 105 under a condition that at least the ferroelectric capacitor 105 is formed on a substrate 10. COPYRIGHT: (C)2004,JPO