Nonvolatile semiconductor memory device,申请号US20020197517-传众专利搜索

Nonvolatile semiconductor memory device

申请公布号：US6661709(B2)

申请号：US20020197517

申请日期：2002.07.18

申请公布日期：2003.12.09

申请人：

HITACHI, LTD.

发明人：YOSHIDA KEIICHI

分类号：G11C16/02;G11C16/06;G11C16/34;(IPC1-7):G11C16/04

主分类号：G11C16/02

摘要：The bit (B6) indicating whether there is the possibility or not to normally complete the write operation by executing again the write operation is provided, together with the bit (B7) indicating whether the access is possible or not from the external side of the chip and the bit (B4) indicating whether the write operation is normally completed or not, to the status register within a non-volatile semiconductor memory device. Accordingly, it can be prevented that the effective memory capacity is reduced with an accidental write error in the electrically programmable and erasable non-volatile semiconductor memory device such as a flash memory.