SEMICONDUCTOR STORAGE DEVICE

申请公布号：JP2003346493(A)

申请号：JP20020155655

申请日期：2002.05.29

申请公布日期：2003.12.05

申请人：

FUJITSU LTD;FUJITSU VLSI LTD

发明人：SHIYUKUYA HIROKO;TANII TSUTOMU

分类号：G11C29/04;G11C11/401;G11C11/408;G11C29/00;G11C29/12;(IPC1-7):G11C29/00

主分类号：G11C29/04

摘要：PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of enhancing the performance of storage cells in pairs. SOLUTION: Address signals RA<SB>n</SB>, RA<SB>n+1</SB>are respectively given to address decoders 1, 2 corresponding to a plurality of banks, the storage cells in each bank are respectively selected, and read data are outputted on the basis of cell information read from the selected storage cells. At least either of the address signals RA<SB>n</SB>, RA<SB>n+1</SB>in a plurality of bits given to the banks is given to the address decoders 1, 2 via changeover circuits 11, 12 for selecting whether or not each bit of the address signals is inverted. COPYRIGHT: (C)2004,JPO

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