LARGE AREA DEPOSITION IN HIGH VACUUM WITH HIGH THICKNESS UNIFORMITY

申请公布号：AU2003226995(A1)

申请号：AU20030226995

申请日期：2003.05.02

申请公布日期：2003.11.17

申请人：

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

发明人：GIACOMO BENVENUTI;ESTELLE HALARY-WAGNER;SIMONE AMOROSI;PATRIK HOFFMANN

分类号：C23C14/24;C30B23/06;(IPC1-7):C23C16/00

主分类号：C23C14/24

摘要：<p>The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.</p>

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