System and method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device,申请号US20020175720-传众专利搜索

System and method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device

申请公布号：US2003116793(A1)

申请号：US20020175720

申请日期：2002.06.19

申请公布日期：2003.06.26

申请人：

CHEN MIIN-JANG;LIN CHING-FUH;LIU CHEE-WEE;LEE MIN-HUNG;CHANG SHU-TONG

发明人：CHEN MIIN-JANG;LIN CHING-FUH;LIU CHEE-WEE;LEE MIN-HUNG;CHANG SHU-TONG

分类号：G01R31/265;G01R31/311;(IPC1-7):H01L31/062

主分类号：G01R31/265

摘要：A method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device includes the steps of: applying at least one current to the MOS device through the gate; detecting at least one electroluminescent signal corresponding to the silicon bandgap energy after the current flows through the MOS device; and outputting the electroluminescent waveform in the time domain. The quality of the interface between a silicon and a gate insulator in the MOS device is determined by analyzing the minority carrier lifetime in silicon. The invention also discloses a characterization system for implementing the method.