Ferroelectric-type nonvolatile semiconductor memory and operation method thereof,申请号US20020269412-传众专利搜索

Ferroelectric-type nonvolatile semiconductor memory and operation method thereof

申请公布号：US2003119212(A1)

申请号：US20020269412

申请日期：2002.10.11

申请公布日期：2003.06.26

申请人：

NISHIHARA TOSHIYUKI;WATANABE KOJI

发明人：NISHIHARA TOSHIYUKI;WATANABE KOJI

分类号：H01L21/8246;H01L27/115;(IPC1-7):H01L21/00

主分类号：H01L21/8246

摘要：A ferroelectric-type nonvolatile semiconductor memory comprising (A) a bit line, (B) a transistor for selection, (C) memory units in the number of N, each memory unit comprising memory cells in the number of M wherein N>=2 and M>=2, and (D) plate lines in the number of MxN, in which the memory units in the number of N are stacked through an insulating interlayer, each memory cell comprises a first electrode, a ferroelectric layer and a second electrode, the first electrodes are in common in each memory unit, and the common first electrode is connected to the bit line through the transistor for selection, and the second electrode of the m-th memory cell in the n-th memory unit is connected to the [(n-1)M+m]-th plate line wherein m=1, 2 . . . M and n=1, 2 . . . N.