Use of variable impedance to control coil sputter distribution

申请公布号：US6579426(B1)

申请号：US19970857921

申请日期：1997.05.16

申请公布日期：2003.06.17

申请人：

APPLIED MATERIALS, INC.

发明人：VAN GOGH JAMES;FORSTER JOHN C.

分类号：H05H1/46;C23C14/34;C23C14/54;H01F29/10;H01J37/32;H01L21/203;H01L21/302;(IPC1-7):C23C14/34

主分类号：H05H1/46

摘要：Capacitances in an impedance-matching box for an RF coil, in a plasma deposition system for depositing a film of sputtered target material on a substrate, can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to "time-averaging" of the RF voltage distributions along the RF coil.

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