METHOD OF FORMING A DEEP TRENCH DRAM CELL

申请公布号：US2003082875(A1)

申请号：US20010999622

申请日期：2001.10.30

申请公布日期：2003.05.01

申请人：

LEE BRIAN

发明人：LEE BRIAN

分类号：H01L21/762;H01L21/02;H01L21/8242;H01L21/84;H01L27/108;H01L27/12;(IPC1-7):H01L21/823;H01L21/824

主分类号：H01L21/762

摘要：A method of forming a deep trench DRAM cell on a semiconductor substrate has steps of: forming a deep trench capacitor in the semiconductor substrate; using silicon-on-insulator (SOI) technology to form a silicon layer on the deep trench capacitor; and forming a vertical transistor on the silicon layer over the deep trench capacitor, wherein the vertical transistor is electrically connected to the deep trench capacitor.

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